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Nuremberg, Germany – May 6, 2025 – The premier global event for the power electronics industry, PCIM Europe 2025, opened its doors at the Nuremberg Exhibition Center. As a leading player in China's power semiconductor sector, Sun.King SwissSEM presented a comprehensive portfolio of cutting-edge products and solutions at Hall 7, Booth 479, showcasing its latest breakthroughs in Silicon Carbide (SiC), IGBT, and power module technologies. The company's innovations drew significant interest and acclaim from industry professionals worldwide.
Focus on Innovation: Global Debut of Flagship Products and Technologies
m23 1400V 100A SiC MOSFET Chip
At this year’s exhibition, Sun.King SwissSEM globally launched its flagship product — the m23 1400V 100A SiC MOSFET chip, a testament to the company’s robust R&D capabilities.
In photovoltaic and energy storage applications, SiC (Silicon Carbide) semiconductors offer significant advantages in high-voltage, high-frequency, and high-temperature environments due to their superior material properties. The 1400V SiC device enables more reliable operation in 2000V PV and ESS systems, enhancing power density, improving energy conversion efficiency, and reducing overall system cost.
With its high efficiency, voltage withstand capability, and thermal stability, 1400V SiC technology is key to advancing next-generation high-voltage renewable systems. As localization progresses and costs continue to decline, SiC devices are poised to play a central role in the energy transition by optimizing system performance and cost-effectiveness.
At the booth, Sun.King also showcased a full lineup of advanced semiconductor chips and modules, including m23 1200V 100A SiC power MOSFET chip, i23 1200V 150A–300A micro-pattern IGBT (300mm wafer), i23 1700V 300A micro-pattern IGBT (200mm wafer), i20 1200V 100A–250A fine-pattern IGBT (300mm wafer) and various related module products. These offerings attracted extensive interest and technical discussions with domestic and international visitors alike.
Technical Dialogue: Charting New Paths for Energy Transformation
During the event, four technical experts from Sun.King SwissSEM were invited to speak at the industry’s Technical Conference, where they presented their latest research findings to a global audience.
Sven Matthias
Paper Title:
Automation-Optimized Design for 62mm Power Modules: Enhanced Performance and Reliability
Abstract:
This paper introduces an ultra-compact substrate design and an automation-friendly assembly process for classic 62 mm IGBT modules, achieving improved electrical performance and system reliability. The innovative approach incorporates three-dimensional gate routing, minimizing the gate connection footprint and maximizing usable area for power devices. The compact design achieves an internal stray inductance of Ls = 10 nH and reduced connection resistance. The structure supports improved power density, enhanced manufacturability, and robust electrical connectivity. Reliability and performance have been validated through structural, electrical, power cycling, and switching tests, positioning the design as a strong candidate for next-generation power electronic applications.
Nick Gilles Schneider
Paper Title:
900 A 1200 V ED Module with New Micro-Pattern Trench IGBT Featuring Local Carrier Confinement Control
Abstract:
This work presents the new SwissSEM 900 A / 1200 V ED-type module, based on a micro-pattern trench IGBT chipset featuring exceptional current density. Compared to previous generations, it achieves nearly 400 mV reduction in VCE, sat at without compromising switching losses. A novel Local Carrier Confinement Technology (LCT) is proposed to optimize carrier distribution, and its benefits are experimentally demonstrated. The reverse recovery diode is optimized as well, showing a 250 mV reduction in VF at equivalent recovery losses. Both the IGBT and diode exhibit excellent ruggedness and smooth switching behavior, highlighting their potential for high-efficiency, high-power applications.
Nick delivered his report live at the PCIM conference, drawing strong interest from attendees.
In addition, Raffael Schnell and Roger Stark shared their latest research:
· High-Performance IGBT Module Based on i23 Micro-Trench Chipset
· SiC MOSFET Cell Layout Optimization Based on Application-Specific Operating Temperatures
Their presentations further underscored Sun.King SwissSEM’s leadership in power device innovation and received wide recognition from peers and experts.
PCIM Europe 2025 is more than just a stage for technology — it is a catalyst for global energy transformation. Through the launch of cutting-edge products and sharing of breakthrough research, Sun.King SwissSEM reaffirmed its leadership in the power semiconductor industry. Looking ahead, the company will continue to advance SiC and IGBT technologies, drive the domestication and sophistication of China's semiconductor supply chain, and collaborate with global partners to build a sustainable green energy ecosystem — contributing to the realization of global carbon neutrality goals.
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